Temperature dependence of hole transport properties through physically defined silicon quantum dots
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DOI: 10.1063/5.0010981
Abstract: For future integration of a large number of qubits and complementary metal-oxide-semiconductor (CMOS) controllers, higher operation temperature of qubits is strongly desired. In this work, we fabricate p-channel silicon quantum dot (Si QD) devices on… read more here.
Keywords: coulomb diamonds; temperature; physically defined; silicon quantum ... See more keywords