Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb screening.
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DOI: 10.1088/1361-6528/ab1866
Abstract: Metamorphic InAs/In0.15Ga0.85As and InAs/In0.31Ga0.69As quantum dot (QD) arrays are known to be photosensitive in the telecommunication ranges at 1.3 and 1.55 μm, respectively; however, for photonic applications of these nanostructures, the effect of levels related… read more here.
Keywords: long term; coulomb screening; quantum dot; inas ingaas ... See more keywords