Origin of the Critical Thickness in Improper Ferroelectric Thin Films.
Sign Up to like & getrecommendations! Published in 2023 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.3c00412
Abstract: Improper ferroelectrics are expected to be more robust than conventional ferroelectrics against depolarizing field effects and to exhibit a much-desired absence of critical thickness. Recent studies, however, revealed the loss of ferroelectric response in epitaxial… read more here.
Keywords: improper ferroelectric; critical thickness; ferroelectric thin; thin films ... See more keywords
Possible absence of critical thickness and size effect in ultrathin perovskite ferroelectric films
Sign Up to like & getrecommendations! Published in 2017 at "Nature Communications"
DOI: 10.1038/ncomms15549
Abstract: Although the size effect in ferroelectric thin films has been known for long time, the underlying mechanism is not yet fully understood and whether or not there is a critical thickness below which the ferroelectricity… read more here.
Keywords: critical thickness; polarization; size effect; size ... See more keywords
Critical thickness of a surface-functionalized coating for enhanced lithium storage: a case study of nanoscale polypyrrole-coated FeS2 as a cathode for Li-ion batteries.
Sign Up to like & getrecommendations! Published in 2019 at "Nanoscale"
DOI: 10.1039/c9nr05523a
Abstract: The encapsulation or coating of conductive materials is an effective strategy to increase the electrochemical ion-storage performance of some promising electrode materials such as transition metal oxides and sulfides, which are low-cost and have high… read more here.
Keywords: critical thickness; storage; coated fes2; ion ... See more keywords
Critical thickness of GaN on AlN: impact of growth temperature and dislocation density
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa7248
Abstract: Critical thickness and strain relaxation of c-plane GaN layers grown by molecular beam epitaxy on AlN were studied as a function of growth temperature and threading dislocation density (TDD). For this purpose we used AlN/sapphire… read more here.
Keywords: critical thickness; growth temperature; growth; dislocation density ... See more keywords