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Published in 2019 at "Advanced electronic materials"
DOI: 10.1002/aelm.201901048
Abstract: An interlaced textile structure has been employed to design a transparent p-n junction-based photodetector. The device consisting of aligned n-SnO2 and p-NiO nanofibers was prepared via a mature electro-spinning process which is suitable for commercial…
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Keywords:
sno nio;
detectivity;
cross bar;
bar sno ... See more keywords
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recommendations!
1
Published in 2017 at "AIP Advances"
DOI: 10.1063/1.4994948
Abstract: A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector…
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Keywords:
cross bar;
transistor selector;
memory;
bipolar transistor ... See more keywords