Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects
Sign Up to like & getrecommendations! Published in 2019 at "Microelectronics Reliability"
DOI: 10.1016/j.microrel.2019.06.019
Abstract: Abstract A simple method for monitoring the switching activity (forming, set, reset events and stuck-at-0/1 faults) in memristive cross-point arrays with line resistance effects is proposed. The method consists in correlating incremental current changes in… read more here.
Keywords: simple method; point arrays; cross point; method monitoring ... See more keywords
Correlation of Ion Transport Hysteresis with the Nanogeometry and Surface Factors in Single Conical Nanopores.
Sign Up to like & getrecommendations! Published in 2017 at "Analytical chemistry"
DOI: 10.1021/acs.analchem.7b03477
Abstract: Better understanding in the dynamics of ion transport through nanopores or nanochannels is important for sensing, nucleic acid sequencing and energy technology. In this paper, the intriguing nonzero cross point, resolved from the pinched hysteresis… read more here.
Keywords: ion transport; surface; conical nanopores; cross point ... See more keywords
Graphene-Boron Nitride-Graphene Cross-point Memristors with Three Stable Resistive States.
Sign Up to like & getrecommendations! Published in 2019 at "ACS applied materials & interfaces"
DOI: 10.1021/acsami.9b04412
Abstract: Two-dimensional (2D) materials based memristors have shown several properties that are not shown by traditional ones, such as high transparency, robust mechanical strength and flexibility, superb chemical stability, enhanced thermal heat dissipation, ultra-low power consumption,… read more here.
Keywords: resistive states; stable resistive; cross point; three stable ... See more keywords
Thermal transport in metal-NbOx-metal cross-point devices and its effect on threshold switching characteristics.
Sign Up to like & getrecommendations! Published in 2023 at "Nanoscale"
DOI: 10.1039/d3nr00173c
Abstract: Volatile threshold switching and current-controlled negative differential resistance (NDR) in metal-oxide-metal (MOM) devices result from thermally driven conductivity changes induced by local Joule heating and are therefore influenced by the thermal properties of the device-structure.… read more here.
Keywords: effect; point devices; threshold switching; metal ... See more keywords
Design of two-terminal-electrode vertical thyristor as cross-point memory cell without selector
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5040426
Abstract: We proposed a two-terminal-electrode vertical thyristor and investigated its suitability as a cross-point memory cell without a selector from the viewpoints of p+- and n+-base region width and a vertically stacked doped-epitaxial-Si layer structure such… read more here.
Keywords: cross point; emitter base; base; base emitter ... See more keywords
Nanoscale cross-point diode array accessing embedded high density PCM
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aa7520
Abstract: The main bottlenecks in the development of current embedded phase change memory (PCM) technology are the current density and data storage density. In this paper, we present a PCM with 4F2 cross-point diode selector and… read more here.
Keywords: cross point; density; cross; diode array ... See more keywords
Application of the Quasi-Static Memdiode Model in Cross-Point Arrays for Large Dataset Pattern Recognition
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Access"
DOI: 10.1109/access.2020.3035638
Abstract: We investigate the use and performance of the quasi-static memdiode model (QMM) when incorporated into large cross-point arrays intended for pattern classification tasks. Following Chua’s memristive devices theory, the QMM comprises two equations, one equation… read more here.
Keywords: static memdiode; memdiode; cross point; quasi static ... See more keywords
Space-Time-Efficient Modeling of Large-Scale 3-D Cross-Point Memory Arrays by Operation Adaption and Network Compaction
Sign Up to like & getrecommendations! Published in 2022 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2021.3123591
Abstract: Three-dimensional (3-D) integrated cross-point memory arrays can be used to build high-density storage-class memory systems. However, the coupled network topology caused by sharing word lines or bit lines between adjacent memory layers significantly enlarges the… read more here.
Keywords: operation; memory arrays; point memory; memory ... See more keywords
Crossbar-Based Memristive Logic-in-Memory Architecture
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2017.2691713
Abstract: The use of memristors and resistive random access memory (ReRAM) technology to perform logic computations, has drawn considerable attention from researchers in recent years. However, the topological aspects of the underlying ReRAM architecture and its… read more here.
Keywords: logic memory; cross point; crossbar based; geometry ... See more keywords
A Search Algorithm for the Worst Operation Scenario of a Cross-Point Phase-Change Memory Utilizing Particle Swarm Optimization
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2018.2855959
Abstract: In this paper, we propose a search algorithm to find the worst operation scenario of a cross-point array of a phase-change random access memory to enable a precise read margin evaluation. The search algorithm utilizes… read more here.
Keywords: algorithm; phase change; cross point; search algorithm ... See more keywords
A Novel Matchline Scheduling Method for Low-Power and Reliable Search Operation in Cross-Point-Array Nonvolatile Ternary CAM
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2020.3027254
Abstract: Cross-point-array nonvolatile ternary content-addressable memory (CPA nvTCAM) has recently emerged as an alternative to static random-access-memory-type TCAM, based on increased demands for high-capacity and low-power attributes. The CPA structure has various structural weaknesses such as… read more here.
Keywords: cross point; point array; array nonvolatile; power ... See more keywords