MBE growth and donor doping of coherent ultrawide bandgap AlGaN alloy layers on single-crystal AlN substrates
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DOI: 10.1063/5.0037079
Abstract: Single-crystal Aluminum Nitride (AlN) crystals enable the epitaxial growth of ultrawide bandgap Al(Ga)N alloys with drastically lower extended defect densities. Here, we report the plasma-MBE growth conditions for high Al-composition AlGaN alloys on single-crystal AlN… read more here.
Keywords: aln substrates; crystal aln; ultrawide bandgap; single crystal ... See more keywords