Epitaxy of Single‐Crystalline GaN Film on CMOS‐Compatible Si(100) Substrate Buffered by Graphene
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DOI: 10.1002/adfm.201905056
Abstract: Fabricating single‐crystalline gallium nitride (GaN)‐based devices on a Si(100) substrate, which is compatible with the mainstream complementary metal‐oxide‐semiconductor circuits, is a prerequisite for next‐generation high‐performance electronics and optoelectronics. However, the direct epitaxy of single‐crystalline GaN… read more here.
Keywords: 100 substrate; crystalline gan; crystalline; epitaxy single ... See more keywords
Continuous Single-Crystalline GaN Film Grown on WS2 -Glass Wafer.
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DOI: 10.1002/smll.202202529
Abstract: Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry mismatched substrates. However, the control of lattice arrangement via 2D materials at the heterointerface presents certain challenges. In this study, the… read more here.
Keywords: ws2 glass; crystalline gan; gan; single crystalline ... See more keywords