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Published in 2017 at "Journal of Materials Science: Materials in Electronics"
DOI: 10.1007/s10854-017-7523-0
Abstract: Single-crystalline ZnO films were grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 30 keV Li and 80 keV N ions at 460 °C. It is shown…
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Keywords:
zno films;
single crystalline;
crystalline zno;
implantation ... See more keywords