LAUSR

Crystallographic properties and electronic structure of V-doped AlN films that absorb near ultraviolet-visible-infrared light

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0 Published in 2018 at "Journal of Applied Physics"

DOI: 10.1063/1.5004609

Abstract: For highly efficient photoconversion devices, 3d-transition-metal-doped AlN is a candidate intermediate-band material. Here, we synthesized and investigated V-doped AlN (AlVN; V ≤ 11%) films. The optical absorption spectra of the films showed characteristic features including a peak… read more here.

Keywords: absorption; electronic structure; doped aln; properties electronic ... See more keywords