Superconductivity and Structural Conversion with Na and K Doping of the Narrow-Gap Semiconductor CsBi4Te6
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DOI: 10.1021/acs.chemmater.8b02030
Abstract: The monoclinic narrow-gap (∼0.08 eV) semiconductor CsBi4Te6 is a unique layered system which can be doped to achieve high thermoelectric performance as well as superconductivity. Here, we report superconductivity and structure change induced by alloying… read more here.
Keywords: semiconductor csbi4te6; superconductivity; narrow gap; csbi4te6 ... See more keywords