Investigation of the degradations in power GaN-on-Si MIS-HEMTs subjected to cumulative γ-ray irradiation
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DOI: 10.1016/j.microrel.2019.06.041
Abstract: Abstract In this work, GaN-on-Si power Metal-Insulator-Semiconductor High Electron Mobility Transistors (MIS-HEMTs) are irradiated through different regimes of cumulative γ-ray irradiation, namely 1, 2, 3, 4, and 5 kGy for the first sample; 1, 3, and… read more here.
Keywords: irradiation; ray irradiation; power; cumulative ray ... See more keywords