The current and capacitance characteristics as a function of sample temperature in YMn0.90Os0.10O3/p-Si structures
Sign Up to like & getrecommendations! Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2019.104587
Abstract: Abstract The I-V and C-V measurements have been performed on the Al/YMn0.90Os0.10O3 (YMOO) /p-Si/Al metal/ferroelectric material/semiconductor (MFES) structure at temperatures between 180 K and 320 K. YMOO thin film has been grown onto p-Si wafer by radio… read more here.
Keywords: 90os0 10o3; current capacitance; temperature; value ... See more keywords
Analytical Drain Current and Capacitance Model for Amorphous InGaZnO TFTs Considering Temperature Characteristics
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.3009086
Abstract: Analytical drain current and capacitance model is developed for the amorphous InGaZnO (a-IGZO) thin-film transistor (TFT). The numerical Pao–Sah model is presented to describe the temperature characteristics considering the deep and tail trap states in… read more here.
Keywords: temperature characteristics; drain current; current capacitance; analytical drain ... See more keywords