Trapping Effects on Leakage and Current Collapse in AlGaN/GaN HEMTs
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08299-0
Abstract: In this paper, we showcase our investigation regarding the effect of acceptor traps in GaN buffer and AlGaN barrier layers on the leakage current and current collapse in GaN high-electron-mobility transistors. The dependence of current… read more here.
Keywords: barrier; collapse; layer; current collapse ... See more keywords
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application
Sign Up to like & getrecommendations! Published in 2017 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2017.12.027
Abstract: Abstract In this paper, the drain current collapse in AlGaN/GaN High Electron Mobility Transistor (HEMT) with field plate engineering is investigated. A small signal equivalent circuit of AlGaN/GaN HEMT is developed and a new drain… read more here.
Keywords: current collapse; algan gan; gan hemt; drain current ... See more keywords
Coeffect of trapping behaviors on the performance of GaN-based devices *
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/39/9/094007
Abstract: Trap-induced current collapse has become one of the critical issues hindering the improvement of GaN-based microwave power devices. It is difficult to study the behavior of each trapping effect separately with the experimental measurement. Transient… read more here.
Keywords: current collapse; trapping behaviors; behaviors performance; gan based ... See more keywords
OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2808334
Abstract: The existence of a correlation between current collapse and off-state reverse-bias leakage current in heteroepitaxially grown AlGaN/GaN high-electron-mobility transistors is investigated from the perspective of conductive threading dislocations. Collapsed current response (recoverable) to synchronized gate–drain… read more here.
Keywords: state; collapse; gate; current collapse ... See more keywords
Correlation of AlGaN/GaN high-electron-mobility transistors electroluminescence characteristics with current collapse
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Express"
DOI: 10.7567/apex.11.024101
Abstract: We report on the correlation between the electroluminescence and current collapse of AlGaN/GaN high-electron-mobility transistors (HEMTs). Standard passivated devices suffering from severe current collapse exhibited high-intensity whitish electroluminescence confined near the drain contact. In contrast,… read more here.
Keywords: collapse; gan high; algan gan; current collapse ... See more keywords