Origin of large dark current increase in InGaAs/InP avalanche photodiode
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.4999646
Abstract: The large dark current increase near the breakdown voltage of an InGaAs/InP avalanche photodiode is observed and analyzed from the aspect of bulk defects in the device materials. The trap level information is extracted from… read more here.
Keywords: inp avalanche; dark current; large dark; current increase ... See more keywords