Novel driver circuit for switching performance improvements in SiC MOSFETs
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Power Electronics"
DOI: 10.1007/s43236-020-00132-5
Abstract: Silicon carbide (SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) are expected to be an attractive replacement for Si MOSFETs in high power applications due to their high blocking voltage, high switching speed, and low switching losses. However,… read more here.
Keywords: voltage; voltage current; sic mosfet; oscillation ... See more keywords
Cooperative Charging of Supercapacitor Trams With Current Overshoot Suppression
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Industry Applications"
DOI: 10.1109/tia.2020.2983163
Abstract: Current overshoot in the charging is an undesired behavior that accelerates the aging of both chargers and batteries. This phenomenon is even more severe in parallel-connected multicharger systems of supercapacitor trams, as the overshooting of… read more here.
Keywords: overshoot suppression; overshoot; current overshoot; supercapacitor trams ... See more keywords
Depressing Start-Up Current Overshoot for a Laser Headlight Driver in High-Temperature and Forward Voltage Drift Conditions
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2018.2795526
Abstract: High-optical-output-power laser diodes (HOO-PLDs) are a new option for the next-generation vehicle headlights. This paper develops a laser headlight driver (LHD) combining a safety standard circuit, dc–dc converter, and feedback controller. The dc–dc converter topology… read more here.
Keywords: forward voltage; voltage drift; current overshoot;
Improved Pulse-Controlled Conductance Adjustment in Trilayer Resistors by Suppressing Current Overshoot
Sign Up to like & getrecommendations! Published in 2020 at "Nanomaterials"
DOI: 10.3390/nano10122462
Abstract: In this work, we demonstrate the enhanced synaptic behaviors in trilayer dielectrics (HfO2/Si3N4/SiO2) on highly doped n-type silicon substrate. First, the three dielectric layers were subjected to material and chemical analyses and thoroughly investigated via… read more here.
Keywords: conductance adjustment; current overshoot; trilayer device; trilayer ... See more keywords