Current shunting effects in Cd3As2: A closer look at the topological-ferromagnet interface
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DOI: 10.1063/5.0141264
Abstract: Topological materials, such as Cd3As2, are of great importance for next-generation computing systems where energy efficiency is paramount. For example, in spin–orbit torque magnetic access memory (SOT-MRAM), topological materials generate the spin–orbit torque necessary for… read more here.
Keywords: shunting effects; closer look; current shunting; effects cd3as2 ... See more keywords