Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields
Sign Up to like & getrecommendations! Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5006249
Abstract: The conduction of current from n-4H-SiC into pyrogenic and dry oxidized films is studied. Anomalous current conduction was observed at a high electric field above 8 MV/cm for dry oxidized metal-oxide-semiconductor (MOS) capacitors, which cannot be… read more here.
Keywords: conduction current; dry oxidized; temperature dependent; current sic ... See more keywords
Analysis of the impact of non-1D effects on the gate switch-on current in 4H-SiC thyristors
Sign Up to like & getrecommendations! Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617020257
Abstract: The impact of non-1D effects caused by the spread of the gate current in the base layer on the gate switch-on current in 4H-SiC thyristors is considered. It is shown that a new switching mechanism… read more here.
Keywords: non effects; switch current; gate switch; impact non ... See more keywords