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Published in 2019 at "Applied Physics Letters"
DOI: 10.1063/1.5111494
Abstract: The charging current of surface traps in AlGaN/GaN high electron mobility transistors with a slot gate structure was investigated. A slot was formed in the middle of the gate metal via the lift-off process. Even…
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Keywords:
surface traps;
gate;
slot gate;
charging current ... See more keywords