Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications
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DOI: 10.1007/s11664-020-07987-1
Abstract: Bilayer selectorless resistive random-access memories (RRAM) have been demonstrated by utilizing the intrinsic nonlinear resistive switching (RS) characteristics, without additional transistor or a selector integration. The bilayer structures, i.e. high-k layer/low-k layer stacks, are highly… read more here.
Keywords: sweep operation; current sweep; multilevel cell; operation nonlinear ... See more keywords