A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient
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DOI: 10.1109/ted.2017.2654481
Abstract: The reliability of GaN high-electron-mobility transistors remains limited by trapping, and a new way to characterize traps is through the drain current transient. In this paper, we report a differential amplitude spectrum (DAS) from which… read more here.
Keywords: amplitude spectrum; differential amplitude; trapping effect; current transient ... See more keywords