The identification of traps in HfO2-based FeFET with SiON as an interlayer using current transient method
Sign Up to like & getrecommendations! Published in 2024 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ad8ae3
Abstract: This work investigates the current transient and trap characteristics of Si FeFET with HfZrO ferroelectric and SiON as the interfacial layer. The trap characteristics in the trapping/detrapping process based on the drain current and gate… read more here.
Keywords: dp3 dp4; current transient; time constants; different time ... See more keywords
A New Differential Amplitude Spectrum for Analyzing the Trapping Effect in GaN HEMTs Based on the Drain Current Transient
Sign Up to like & getrecommendations! Published in 2017 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2017.2654481
Abstract: The reliability of GaN high-electron-mobility transistors remains limited by trapping, and a new way to characterize traps is through the drain current transient. In this paper, we report a differential amplitude spectrum (DAS) from which… read more here.
Keywords: amplitude spectrum; differential amplitude; trapping effect; current transient ... See more keywords