Leakage currents and Fermi-level shifts in GaN layers upon iron and carbon-doping
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DOI: 10.1063/1.4993180
Abstract: Semi-insulating GaN is a prerequisite for lateral high frequency and high power electronic devices to isolate the device region from parasitic conductive channels. The commonly used dopants for achieving semi-insulating GaN, Fe, and C cause… read more here.
Keywords: carbon; gan layers; currents fermi; level shifts ... See more keywords