Modeling of the Spin Currents in Resonant Tunneling Diodes Based on Ferromagnetic Semiconductor Spacers
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DOI: 10.1007/s10948-018-4880-8
Abstract: In this paper, we theoretically study the effects of the widths of the central quantum well GaN and the right barrier AlGaN on the spin-polarized currents in resonant tunneling diode based on GaMnN contacts and… read more here.
Keywords: right barrier; spin current; currents resonant; spin ... See more keywords