Temperature-dependent transport properties of CVD-fabricated n-GaN nanorods/p-Si heterojunction devices
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DOI: 10.1039/d0ra05973k
Abstract: We report on the structural, electrical, and transport properties of high quality CVD-fabricated n-GaN nanorods (NRs)/p-Si heterojunction diodes. The X-ray diffraction (XRD) studies reveal the growth of hexagonal wurtzite GaN structure. The current–voltage (I–V) characteristics… read more here.
Keywords: gan nanorods; transport properties; transport; fabricated gan ... See more keywords