Quantitative ToF-SIMS Assessment of In-Plane and Out-of-Plane Nb Doping Uniformity in CVT-Grown MoS2 Crystals.
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DOI: 10.1002/smtd.202501405
Abstract: Substitutional doping in transition metal dichalcogenides (TMDs) has recently garnered renewed attention due to increasing high demands for ultra‐low contact resistance. However, understanding and controlling the spatial distribution of dopants in 2D TMDs is key… read more here.
Keywords: quantitative tof; cvt grown; plane; tof sims ... See more keywords