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Published in 2020 at "IEEE Transactions on Device and Materials Reliability"
DOI: 10.1109/tdmr.2020.3007128
Abstract: This experimental study reports first observations of (i) SOA boundary shift in AlGaN/GaN HEMTs and (ii) early time-to-fail of vertical AlGaN/GaN epi-stack under fast changing (sub-10ns rise time) cyclic pulse transient stress, which otherwise qualified…
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Keywords:
algan gan;
cyclic transient;
transient stress;
epi stack ... See more keywords