Oxygen and Nitrogen Transfer in Furnaces in Crystal Growth of Silicon by Czochralski and Directional Solidification Processes
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DOI: 10.3390/ma15051843
Abstract: Impurity concentrations of oxygen, carbon, nitrogen, iron, and other heavy metals should be well controlled in silicon crystals to maintain the crystal quality for application in electronic and solar cell devices. Contamination by impurities occurs… read more here.
Keywords: czochralski directional; growth silicon; crystal growth; growth ... See more keywords