Neural‐Network Potential for Defect Formation Induced by Knock‐On Irradiation Damage in 4H‐SiC
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DOI: 10.1002/aelm.202400911
Abstract: Understanding the microscopic mechanism of the irradiation damage in silicon carbide (SiC) is of great importance for improving the irradiation resistance and the ion implantation processes of SiC‐based devices. Currently, the atomic‐scale simulations of the… read more here.
Keywords: damage sic; network potential; irradiation; irradiation damage ... See more keywords
Study on Damage of 4H-SiC Single Crystal through Indentation and Scratch Testing in Micro–Nano Scales
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DOI: 10.3390/app10175944
Abstract: In this paper, a series of indentation tests in which the maximum normal force ranged from 0.4 to 3.3 N were carried out to determine the fracture toughness of 4H-SiC single crystals. The results indicated… read more here.
Keywords: single crystal; indentation; single crystals; study damage ... See more keywords
Temperature Effects of Nuclear and Electronic Stopping Power on Si and C Radiation Damage in 3C-SiC
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DOI: 10.3390/ma17122843
Abstract: Silicon carbide has been considered a material for use in the construction of advanced high-temperature nuclear reactors. However, one of the most important design issues for future reactors is the development of structural defects in… read more here.
Keywords: temperature; damage sic; stopping power; radiation damage ... See more keywords