Simulation of Single-Particle Displacement Damage in Silicon—Part III: First Principle Characterization of Defect Properties
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DOI: 10.1109/tns.2018.2790843
Abstract: A first principle study of the defects generated by displacement cascades in silicon is performed. This paper is particularly focused on two defect configurations; the divacancy and the tri-interstitial, both identified in previous molecular dynamics… read more here.
Keywords: first principle; displacement damage; particle displacement; damage silicon ... See more keywords