Proton-Induced Displacement Damage and Total-Ionizing-Dose Effects on Silicon-Based MEMS Resonators
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DOI: 10.1109/tns.2017.2749180
Abstract: The response of silicon-based microelectromechanical systems resonators to proton irradiation is determined by the combined effects of displacement damage and total ionizing dose (TID). Displacement damage (DD) can lead to carrier removal, which tends to… read more here.
Keywords: displacement damage; silicon based; damage total; total ionizing ... See more keywords