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Published in 2020 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2020.157783
Abstract: Abstract We report molecular beam epitaxy of InAs quantum dash-in-a-well (DWELL) on InP for 2 μm wavelength emission using intentional ripening. By inserting the quantum dashes into a 10 nm InGaAs quantum well and employing…
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Keywords:
dash well;
emission;
inas ingaas;
optical properties ... See more keywords