Deep sub-60 mV/dec subthreshold swing independent of gate bias sweep direction in an in situ SiN/Al0.6Ga0.4N/GaN-on-Si metal-insulator high electron mobility transistor
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DOI: 10.1063/5.0131988
Abstract: In this Letter, we demonstrated deep sub-60 mV/dec subthreshold swings ( SS) independent of gate bias sweep direction in GaN-based metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) with an Al0.6Ga0.4N/GaN heterostructure and in situ SiN as gate… read more here.
Keywords: dec subthreshold; gate; deep sub; sub dec ... See more keywords