A novel deep gate power MOSFET in partial SOI technology for achieving high breakdown voltage and low lattice temperature
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DOI: 10.1007/s10825-021-01724-5
Abstract: We propose a novel deep gate lateral double diffused metal-oxide-semiconductor (LDMOS) field-effect transistor in partial silicon-on-insulator (PSOI) technology for achieving high breakdown voltage and reduced power dissipation. In the proposed device, an N+ well is… read more here.
Keywords: breakdown voltage; voltage; deep gate; technology achieving ... See more keywords