Enhanced reverse recovery characteristics of 1.2 kV SiC MOSFETs with integrated low schottky-barrier Poly-Si/SiC JBS and deep p+ guard regions
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DOI: 10.1088/1402-4896/adf6f1
Abstract: We propose 1.2 kV Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a monolithically integrated low Schottky-barrier poly-Si/SiC junction-barrier Schottky (JBS) diode and deep p+ guard regions. The n-type poly-Si anode (work function ≈4.03 eV)… read more here.
Keywords: jbs; reverse recovery; schottky barrier; deep guard ... See more keywords