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Published in 2019 at "Current Applied Physics"
DOI: 10.1016/j.cap.2018.10.019
Abstract: Abstract Degradation mechanism of 265-nm deep ultraviolet light emitting diodes (UV-LEDs) has been investigated by means of electroluminescence, current-voltage measurement, capacitance-voltage measurement, and transmission electron microscopy (TEM) equipped with energy dispersive X-ray spectrometer (EDAX). It…
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Keywords:
microscopy;
deep leds;
transmission electron;
degradation ... See more keywords
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Published in 2020 at "Applied Physics Letters"
DOI: 10.1063/5.0015263
Abstract: Deep UV-LEDs (DUV-LEDs) emitting at 233 nm with an emission power of (1.9 ± 0.3) mW and an external quantum efficiency of (0.36 ± 0.07) % at 100 mA are presented. The entire DUV-LED process chain was optimized including the reduction…
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Keywords:
deep leds;
233 algan;
power 233;
milliwatt power ... See more keywords
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Published in 2017 at "Journal of Semiconductors"
DOI: 10.1088/1674-4926/38/11/113003
Abstract: High-quality AlN layers with low-density threading dislocations are indispensable for high-efficiency deep ultraviolet light-emitting diodes (UV-LEDs). In this work, a high-temperature AlN epitaxial layer was grown on sputtered AlN layer (used as nucleation layer, SNL)…
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Keywords:
quality;
layer;
high yield;
sputtered aln ... See more keywords
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Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12213731
Abstract: The current pandemic crisis caused by SARS-CoV-2 has also pushed researchers to work on LEDs, especially in the range of 220–240 nm, for the purpose of disinfecting the environment, but the efficiency of such deep…
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Keywords:
deep leds;
reliability leds;
reliability;
algan based ... See more keywords