Impact of Defects and Disorder on the Stability of Ta3N5 Photoanodes
Sign Up to like & getrecommendations! Published in 2024 at "Advanced Functional Materials"
DOI: 10.1002/adfm.202405532
Abstract: The photoelectrochemical performance of Ta3N5 photoanodes is strongly impacted by the presence of shallow and deep defects within the bandgap. However, the role of such states in defining stability under operational conditions is not well… read more here.
Keywords: ta3n5 photoanodes; oxygen; stability; deep level ... See more keywords
Distinctive Deep‐Level Defects in Non‐Stoichiometric Sb2Se3 Photovoltaic Materials
Sign Up to like & getrecommendations! Published in 2022 at "Advanced Science"
DOI: 10.1002/advs.202105268
Abstract: Abstract Characterizing defect levels and identifying the compositional elements in semiconducting materials are important research subject for understanding the mechanism of photogenerated carrier recombination and reducing energy loss during solar energy conversion. Here it shows… read more here.
Keywords: defect; deep level; sb2se3 photovoltaic; sb2se3 ... See more keywords
Charge-based deep level transient spectroscopy of B-doped and undoped polycrystalline diamond films
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Materials Science"
DOI: 10.1007/s10853-017-1217-0
Abstract: Abstract The undoped and B-doped polycrystalline diamond thin film was synthesized by hot filament chemical vapor deposition and microwave plasma, respectively. The structural characterization was performed by scanning electron microscopy, X-ray diffraction and Raman spectroscopy.… read more here.
Keywords: deep level; level transient; polycrystalline diamond; spectroscopy ... See more keywords
Photoluminescence Study of Deep Level Defects in ZnO Thin Films
Sign Up to like & getrecommendations! Published in 2018 at "Silicon"
DOI: 10.1007/s12633-018-9876-2
Abstract: In the present work, zinc oxide (ZnO) thin films were prepared by heating, at 500 ∘C, metallic Zn films deposited onto Si (100) substrates by RF magnetron sputtering. According to the x-rays diffraction patterns, the… read more here.
Keywords: thin films; deep level; zno thin; level defects ... See more keywords
Combining partial nitrification and post endogenous denitrification in an EBPR system for deep-level nutrient removal from low carbon/nitrogen (C/N) domestic wastewater.
Sign Up to like & getrecommendations! Published in 2018 at "Chemosphere"
DOI: 10.1016/j.chemosphere.2018.06.135
Abstract: In this study, partial nitrification and post endogenous denitrification (PED) were combined with enhancing bacterial phosphorus removal (EBPR) in an anaerobic/aerobic/anoxic operated sequencing batch reactor (SBR) for deep-level nutrient removal from low carbon/nitrogen (C/N, chemical… read more here.
Keywords: carbon; deep level; removal; wastewater ... See more keywords
Multiple deep-level defect correlated emissions and phosphorescence in Eu3+ doped Gd2O3 compound systems
Sign Up to like & getrecommendations! Published in 2020 at "Materials Letters"
DOI: 10.1016/j.matlet.2020.127925
Abstract: Abstract Various concentrations of Europium doped Gadolinium Oxide powders are synthesized by high temperature solid state reaction method. X-ray diffraction pattern of the compounds revealed single phase crystal formation, consistent with predominant monoclinic phase of… read more here.
Keywords: deep level; defect correlated; level; multiple deep ... See more keywords
Tunneling current in w-GaN/AlN(0001) structures with deep-level defects
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.06.034
Abstract: Abstract The influence of the interface deep-level defects on the tunneling current of a double-barrier w-AlN/GaN (0001) structure is studied. It is shown that the peculiarities of the current essentially depend on the positions of… read more here.
Keywords: deep level; level; defects tunneling; aln ... See more keywords
Fermi level pinning, capacitance hysteresis, tunnel effect, and deep level in AlGaN/GaN high-electron-mobility transistor
Sign Up to like & getrecommendations! Published in 2021 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2021.106959
Abstract: Abstract This paper presents a detailed investigation of the degradation of two (Pt/Au)–Al0.2Ga0.8N/GaN/Al2O3 high-electron-mobility transistor(HEMT) structures, denoted as HEMT1 and HEMT2, by capacitance–voltage (C–V), forward current–voltage (I–V), and capacitance deep-level transient spectroscopy (DLTS)measurements in the… read more here.
Keywords: deep level; mobility transistor; level; high electron ... See more keywords
Revealing composition and structure dependent deep-level defect in antimony trisulfide photovoltaics
Sign Up to like & getrecommendations! Published in 2021 at "Nature Communications"
DOI: 10.1038/s41467-021-23592-0
Abstract: Antimony trisulfide (Sb2S3) is a kind of emerging light-harvesting material with excellent stability and abundant elemental storage. Due to the quasi-one-dimensional symmetry, theoretical investigations have pointed out that there exist complicated defect properties. However, there… read more here.
Keywords: antimony trisulfide; composition; defect; deep level ... See more keywords
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-13191-9
Abstract: Deep-level defects in n-type GaAs1−xBix having 0 ≤ x ≤ 0.023 grown on GaAs by molecular beam epitaxy at substrate temperature of 378 °C have been injvestigated by deep level transient spectroscopy. The optical properties of the layers have been… read more here.
Keywords: defects type; deep level; level; gaasbi ... See more keywords
Deep-level defects induced by implantations of Si and Mg ions into undoped epitaxial GaN
Sign Up to like & getrecommendations! Published in 2024 at "Scientific Reports"
DOI: 10.1038/s41598-024-65142-w
Abstract: The properties and concentrations of deep-level defects induced by implantations of Si and Mg ions into unintentionally doped (UID) epitaxial GaN have been revealed by using the Laplace-transform photoinduced transient spectroscopy (LPITS) and molecular dynamics… read more here.
Keywords: defects induced; deep level; level defects; implantations ions ... See more keywords