Deep levels related to the carbon antisite–vacancy pair in 4H-SiC
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0059953
Abstract: Photo-induced current transient spectroscopy (PICTS) and electron paramagnetic resonance (EPR) are used to study irradiation-induced defects in high-purity semi-insulating (HPSI) 4H-SiC. Several deep levels with the ionization energy ranging from 0.1 to ∼1.1 eV have been… read more here.
Keywords: vacancy pair; antisite vacancy; deep levels;
Characterization of Deep Levels in AlGaN|GaN HEMT by FT-DLTS and Current DLTS
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620100127
Abstract: In this work, GaN|AlGaN high electron mobility transistor (HEMT) structures are investigated, grown on semi-insulating SiC substrates by molecular beam epitaxy and metal–organic chemical-vapor deposition techniques. This paper reports on the kink effect and hysteresis… read more here.
Keywords: levels algan; characterization deep; algan gan; deep levels ... See more keywords