N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3022401
Abstract: This work presents recent progress in the W-band (94 GHz) power performance of N-polar GaN deep recess HEMTs grown on sapphire substrates. While SiC has been the substrate of choice to achieve the highest level… read more here.
Keywords: polar gan; recess hemts; deep recess; sapphire ... See more keywords
6.2 W/Mm and Record 33.8% PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Microwave and Wireless Components Letters"
DOI: 10.1109/lmwc.2021.3067228
Abstract: This letter reports on the $W$ -band power performance of N-polar GaN deep recess MIS–high electron mobility transistors (HEMTs) using a new atomic layer deposition (ALD) ruthenium (Ru) gate metallization process. The deep recess structure… read more here.
Keywords: tex math; polar gan; deep recess; inline formula ... See more keywords