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Published in 2017 at "Optics Communications"
DOI: 10.1016/j.optcom.2017.01.041
Abstract: Abstract We design and investigate numerically a Si-based deep-trench microstructure covered with continuous thin gold (Au) films. It breaks through the absorption limitation of Si material and greatly extends the near-infrared (NIR) absorption range to…
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Keywords:
absorption;
deep trench;
trench;
near infrared ... See more keywords
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Published in 2020 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/ab73e7
Abstract: Channel holes (CH) and common source line (CSL) etch are two of key process challenges in 3D NAND. With the increase of stacked layers, the aspect ratio become larger than 50:1. One of key issues…
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Keywords:
deep trench;
process;
etch process;
nand memory ... See more keywords
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Published in 2025 at "IEEE Sensors Journal"
DOI: 10.1109/jsen.2025.3632883
Abstract: A new design of active deep trench chargecoupled device (CCD)-on-CMOS is described and characterized, featuring a two-phase pixel with a built-in electric field that enables highly efficient and fast charge transfer. A charge transfer inefficiency…
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Keywords:
ccd cmos;
active deep;
charge transfer;
transfer ... See more keywords
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Published in 2025 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2024.3501255
Abstract: In a CMOS image sensor, the total dark current (DC) is the sum of several contributions that are difficult to discriminate, even if activation energies are extracted. For example, when considering the interface generation, there…
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Keywords:
trench interface;
capacitive deep;
dark current;
deep trench ... See more keywords
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Published in 2021 at "Optics express"
DOI: 10.1364/oe.428314
Abstract: We propose a plasmonic diffraction structure combined with deep trench isolation (DTI) filled with highly reflective metal to enhance the near-infrared (NIR) sensitivity of image sensors. The plasmonic diffraction structure has a silver grating on…
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Keywords:
deep trench;
plasmonic diffraction;
silicon;
sensitivity ... See more keywords
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Published in 2024 at "Micromachines"
DOI: 10.3390/mi15060684
Abstract: In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined with the P-SiC region…
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Keywords:
trench super;
super junction;
junction;
mosfet ... See more keywords