Defect appearance on 4H-SiC homoepitaxial layers via molten KOH etching
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DOI: 10.1016/j.jcrysgro.2019.125359
Abstract: Abstract Epitaxial defects such as threading screw dislocation (TSD), basal plane dislocation (BPD) and so on will seriously reduce the reverse voltage or increase leakage current of power devices. We studied the classification and statistics… read more here.
Keywords: molten koh; defect appearance; epitaxial defects; appearance sic ... See more keywords