Phase defect characterization using generative adversarial networks for extreme ultraviolet lithography.
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DOI: 10.1364/ao.480356
Abstract: The multilayer defects of mask blanks in extreme ultraviolet (EUV) lithography may cause severe reflectivity deformation and phase shift. The profile information of a multilayer defect is the key factor for mask defect compensation or… read more here.
Keywords: lithography; defect characterization; extreme ultraviolet; adversarial networks ... See more keywords
Defect Characterization in Thermoelectric Zn-Sb Systems by Positron Annihilation
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DOI: 10.4028/www.scientific.net/ddf.373.245
Abstract: Positron lifetimes and momentum distributions of annihilating electron-positron pairs have been calculated for vacancies in ZnSb and Zn4Sb3. The calculated positron lifetimes for bulk ZnSb and Zn4Sb3 are 203 ps and 208 ps, and for… read more here.
Keywords: znsb zn4sb3; defect characterization; characterization thermoelectric; znsb ... See more keywords