Recent progress on the electronic structure, defect, and doping properties of Ga2O3
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DOI: 10.1063/1.5142999
Abstract: Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high breakdown field of 8 MV/cm, and high thermal… read more here.
Keywords: defect doping; electronic structure; structure defect; chemistry ... See more keywords