Articles with "defect evolution" as a keyword



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Effect of Transition Metal Ion Doping on the Microstructure, Defect Evolution, and Magnetic and Magnetocaloric Properties of CuFeO2 Ceramics

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Published in 2020 at "Journal of Superconductivity and Novel Magnetism"

DOI: 10.1007/s10948-020-05550-x

Abstract: The polycrystalline CuFeO2 (CFO) and CuFe1-xMxO2 (M = Ti, Hf, Zr, M-CFO) samples are synthesized by solid-state reaction method. The doping effect of tetravalent nonmagnetic transition metal M4+ ions on the microstructure, defect evolution, and magnetic and… read more here.

Keywords: transition metal; transition; evolution magnetic; cfo ... See more keywords
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Defect evolution in heavy ion irradiated nanotwinned Cu with nanovoids

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Published in 2017 at "Journal of Nuclear Materials"

DOI: 10.1016/j.jnucmat.2017.09.031

Abstract: Abstract Epitaxial nanotwinned Cu film with abundant nanovoids surrounding domain boundaries was subjected to Kr ++ ion irradiation inside a transmission electron microscope at various dose rates. Irradiation-induced defect clusters distributed preferentially near domain boundaries… read more here.

Keywords: irradiated nanotwinned; ion; defect evolution; heavy ion ... See more keywords

Defect evolution in Ni and NiCoCr by in situ 2.8 MeV Au irradiation

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Published in 2019 at "Journal of Nuclear Materials"

DOI: 10.1016/j.jnucmat.2019.05.026

Abstract: Abstract The evolution of radiation-induced defects in Ni and the single-phase concentrated solid solution alloy, NiCoCr, were investigated during in situ 2.8 MeV Au ion irradiation and post-irradiation analysis using transmission electron microscopy. Compared to Ni,… read more here.

Keywords: microscopy; defect evolution; defect clusters; irradiation ... See more keywords
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Defect evolution mechanism in U3Si2 from molecular dynamics simulations

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Published in 2020 at "Journal of Nuclear Materials"

DOI: 10.1016/j.jnucmat.2020.152238

Abstract: Abstract U3Si2 is proposed as a promising candidate for accident tolerant fuel (ATF) in recent years. Compared to previous extensively-used UO2 fuel, U3Si2 has the advantage of a higher fissile density and thermal conductivity, which… read more here.

Keywords: evolution; molecular dynamics; evolution mechanism; dynamics simulations ... See more keywords

Defect Evolution in GaAs-based Low-mismatch Heterostructures

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Published in 2018 at "Microscopy and Microanalysis"

DOI: 10.1017/s1431927618000521

Abstract: Epitaxial growth of thin films of ternary semiconductors such as In1-xGaxAs on GaAs substrates enables band-gap engineering which is very useful for many device applications such as intermediate-band solar cells, lasers, light-emitting diodes, etc. Due… read more here.

Keywords: low mismatch; defect evolution; film; microscopy ... See more keywords

Insight into the Regulatory Role of Defect Evolution on the Growth of Single-Crystalline Covalent Organic Frameworks.

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Published in 2025 at "ACS nano"

DOI: 10.1021/acsnano.5c02505

Abstract: The rapid synthesis of large-sized single-crystalline two-dimensional (2D) covalent organic frameworks (COFs) remains a formidable challenge with current synthetic techniques. A thorough microscopic comprehension of the dynamic processes that govern crystal growth from the perspective… read more here.

Keywords: single crystalline; crystal growth; covalent organic; organic frameworks ... See more keywords

Molecular dynamics simulation of effect of void on subsurface defect evolution in nano-cutting of γ-TiAl alloy

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Published in 2025 at "Journal of Applied Physics"

DOI: 10.1063/5.0275592

Abstract: Defects such as voids are an unavoidable occurrence during the processing and preparation of materials, which can significantly impact their cutting performance and surface quality. To investigate the influence of void defects on single-crystal γ-TiAl… read more here.

Keywords: nano cutting; subsurface defect; subsurface; molecular dynamics ... See more keywords

Defect evolution in proton-irradiated 4H-SiC

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Published in 2025 at "Applied Physics Letters"

DOI: 10.1063/5.0289493

Abstract: 4H silicon carbide (4H-SiC) is a critical material for power electronics used in extreme radiation environments such as spacecraft and nuclear reactors. Among all kinds of radiations, proton radiation needs to be well investigated since… read more here.

Keywords: energy; radiation; irradiation; defect evolution ... See more keywords

Simulation of defect evolution in tungsten during annealing by developing a vacancy and interstitial-type defect evolution model

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Published in 2024 at "Physica Scripta"

DOI: 10.1088/1402-4896/ad1fc8

Abstract: In this work, a Vacancy and Interstitial-Type Defect Evolution (VITDE) model is developed to study the annealing and clustering behaviors of the irradiation-induced defect in tungsten (W). The post annealing of W-ion damaging at 300… read more here.

Keywords: evolution; post; defect evolution; annealing case ... See more keywords