Effect of vacancy defect on optoelectronic properties of monolayer tungsten diselenide
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DOI: 10.1007/s11082-017-1266-2
Abstract: Optoelectronic properties of pristine and vacancy defect monolayer tungsten diselenide (WSe2) have been investigated by the first principles calculations. The results predicate that Se defect monolayer WSe2 is direct semiconductor whereas the W defect monolayer… read more here.
Keywords: vacancy defect; monolayer; optoelectronic properties; defect monolayer ... See more keywords