Influence of Radiation-Induced Displacement Defect in 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13060901
Abstract: The effect of displacement defect on SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) due to radiation is investigated using technology computer-aided design (TCAD) simulation. The position, energy level, and concentration of the displacement defect are considered as… read more here.
Keywords: defect; field effect; defect sic; displacement defect ... See more keywords