Defects in Arsenic Implanted р+–n- and n+–p- Structures Based on MBE Grown CdHgTe Films
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DOI: 10.1007/s11182-018-1278-9
Abstract: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) CdxHg1–xTe (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission… read more here.
Keywords: implanted structures; structures based; based mbe; arsenic implanted ... See more keywords