Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method
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DOI: 10.1063/5.0261495
Abstract: Deep-level defects in Ta-doped β-Ga2O3 single crystals grown using the optical floating zone method are investigated. Deep-level transient spectroscopy (DLTS) in conjunction with Laplace-DLTS (L-DLTS) and photoluminescence (PL) has been applied to (100) oriented β-Ga2O3:Ta… read more here.
Keywords: grown using; defects doped; doped ga2o3; optical floating ... See more keywords