Electrical Properties of the V-Defects of Epitaxial HgCdTe
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DOI: 10.1007/s11664-017-5393-0
Abstract: The manufacturing process of wide-band-gap matrix photodetector devices and miniaturization of their individual pixels gave rise to increased demands on the material quality and research methods. In the present paper we propose using the methods… read more here.
Keywords: microscopy; properties defects; epitaxial hgcdte; defects epitaxial ... See more keywords