Evaluation of the concentration of point defects in GaN
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DOI: 10.1038/s41598-017-08570-1
Abstract: Photoluminescence (PL) was used to estimate the concentration of point defects in GaN. The results are compared with data from positron annihilation spectroscopy (PAS), secondary ion mass spectrometry (SIMS), and deep level transient spectroscopy (DLTS).… read more here.
Keywords: defects gan; point defects; concentration point; spectroscopy ... See more keywords
Vacancy-Type Defects in GaN for Power Devices Probed by Positron Annihilation
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DOI: 10.4028/www.scientific.net/ddf.373.183
Abstract: Native defects and ion-implantation induced defects in GaN were studied by means of positron annihilation. Measurements of Doppler broadening spectra of the annihilation radiation for GaN layers grown on Si substrates showed that optically active… read more here.
Keywords: annihilation; type defects; defects gan; vacancy ... See more keywords