Sign Up to like & get
recommendations!
0
Published in 2021 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2021.126182
Abstract: Abstract A new type of morphological defects related to substrate micropipe is observed in 4H-SiC thick homoepitaxial layers. The structure and formation mechanism are investigated by optical microscopy, laser microscopy, scanning electron microscopy, micro-Raman spectroscopy,…
read more here.
Keywords:
defects related;
microscopy;
spectroscopy;
morphological defects ... See more keywords