Dimer-vacancy defects on Si(1 0 0): The role of nickel impurity
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DOI: 10.1016/j.apsusc.2019.144647
Abstract: Abstract Using scanning tunneling microscopy, x-ray photoelectron spectroscopy, and low-energy electron diffraction, we have studied clean and Ni-containing Si(1 0 0) surfaces and shown that the Ni contamination can easily appear at the Si(1 0 0) during its annealing… read more here.
Keywords: vacancy defects; defects role; impurity; dimer vacancy ... See more keywords
Genesis and evolution of extended defects: The role of evolving interface instabilities in cubic SiC
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DOI: 10.1063/1.5132300
Abstract: Emerging wide bandgap semiconductor devices such as the ones built with SiC have the potential to revolutionize the power electronics industry through faster switching speeds, lower losses, and higher blocking voltages, which are superior to… read more here.
Keywords: genesis evolution; evolution; extended defects; evolution extended ... See more keywords